IndiumV3, Main, Repository, bibRecord, 00D971

Be diffusion behavior in InGaAs, InGaAsP and InGaAs/InGaAsP GSMBE structures

Identifieur interne : 00D971 ( Main/Repository ); précédent : 00D970; suivant : 00D972

Be diffusion behavior in InGaAs, InGaAsP and InGaAs/InGaAsP GSMBE structures

Auteurs : RBID : Pascal:03-0212417

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Semiconducteur III-V, Indium arséniure, Gallium arséniure, Indium phosphure, Gallium phosphure, Couche mince, Méthode GSMBE, Hétérojonction, Semiconducteur type n, Dopage, Addition béryllium, Recuit thermique rapide, Diffusion(transport), Hétérodiffusion, Profil profondeur, As Ga In P, 6855L, Fabrication microélectronique, InGaAs:Be, InGaAsP:Be, As Ga In.
Wicri :
- concept : Dopage.

English descriptors

KwdEn :
- Beryllium additions, Depth profiles, Diffusion, Doping, Experimental study, GSMBE method, Gallium arsenides, Gallium phosphides, Heterojunctions, III-V semiconductors, Impurity diffusion, Indium arsenides, Indium phosphides, Microelectronic fabrication, Rapid thermal annealing, Thin films, n-type conductors.

Abstract

Results on Be diffusion during post-growth rapid thermal annealing at 750°C and 850°C in InGaAs, InGaAsP homostructures and InGaAs/InGaAsP heterostructures, grown by gas source molecular beam epitaxy, are reported. Profiles calculated with the kick-out model can be fitted to experimental secondary ion mass spectrometry profiles assuming Be to diffuse as neutral interstitial species.

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Pascal:03-0212417

Le document en format XML

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<author><name sortKey="Koumetz, S" uniqKey="Koumetz S">S. Koumetz</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>GPM, UMR CNRS 6634, Technopôle du Madrillet</s1>
<s2>76800 Saint Etienne du Rouvray</s2>
<s3>FRA</s3>
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<settlement type="city">Saint Etienne du Rouvray</settlement>
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<author><name sortKey="Dubois, C" uniqKey="Dubois C">C. Dubois</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>LPM, INSA de Lyon, 20 avenue A. Einstein</s1>
<s2>69621, Villeurbanne</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
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<country>France</country>
<placeName><region type="region" nuts="2">Rhône-Alpes</region>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Beryllium additions</term>
<term>Depth profiles</term>
<term>Diffusion</term>
<term>Doping</term>
<term>Experimental study</term>
<term>GSMBE method</term>
<term>Gallium arsenides</term>
<term>Gallium phosphides</term>
<term>Heterojunctions</term>
<term>III-V semiconductors</term>
<term>Impurity diffusion</term>
<term>Indium arsenides</term>
<term>Indium phosphides</term>
<term>Microelectronic fabrication</term>
<term>Rapid thermal annealing</term>
<term>Thin films</term>
<term>n-type conductors</term>
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<term>Gallium arséniure</term>
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<term>Recuit thermique rapide</term>
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<term>Hétérodiffusion</term>
<term>Profil profondeur</term>
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<term>6855L</term>
<term>Fabrication microélectronique</term>
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<front><div type="abstract" xml:lang="en">Results on Be diffusion during post-growth rapid thermal annealing at 750°C and 850°C in InGaAs, InGaAsP homostructures and InGaAs/InGaAsP heterostructures, grown by gas source molecular beam epitaxy, are reported. Profiles calculated with the kick-out model can be fitted to experimental secondary ion mass spectrometry profiles assuming Be to diffuse as neutral interstitial species.</div>
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<fA14 i1="01"><s1>GPM, UMR CNRS 6634, Technopôle du Madrillet</s1>
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<s5>15</s5>
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<s5>16</s5>
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<fC03 i1="17" i2="3" l="FRE"><s0>As Ga In P</s0>
<s4>INC</s4>
<s5>52</s5>
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<fC03 i1="18" i2="3" l="FRE"><s0>6855L</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
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Be diffusion behavior in InGaAs, InGaAsP and InGaAs/InGaAsP GSMBE structures

Be diffusion behavior in InGaAs, InGaAsP and InGaAs/InGaAsP GSMBE structures

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri